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Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 7 1.4 MAX. 1500 800 16 40 125 5.0 1.8 UNIT V V A A W V A s
Tmb 25 C IC = 7.0 A; IB = 1.17 A f = 82 kHz ICsat = 7.0 A; f = 82 kHz
PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 16 40 10 15 200 10 125 150 150 UNIT V V A A A A mA A W C C
average over any 20 ms period Tmb 25 C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W
1 Turn-off current.
September 1997
1
Rev 1.000
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IC = 7.0 A; IB = 1.17 A IC = 7.0 A; IB = 1.17 A IC = 1 A; VCE = 5 V IC = 7 A; VCE = 5 V
MIN. 7.5 0.80 9 6
TYP. 14 0.88 17 9
MAX. 1.0 2.0 1.0 5.0 0.97 27 12.5
UNIT mA mA mA V V V
Emitter cut-off current Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (82 kHz line deflection dynamic test circuit). Turn-off storage time Turn-off fall time CONDITIONS ICsat = 7.0 A; LC = 100 H; Cfb = 3 nF; VCC = 138 V; IB(end) = 1.0 A TYP. MAX. UNIT s s
ts tf
1.4 0.06
1.8 0.1
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
TRANSISTOR IC DIODE
ICsat
100
hFE VCE = 1 V
BU2530/2AL
t
Tj = 85 C Tj = 25 C
IB
IBend t 3.5us 5us 12.2us
10
VCE
1 0.01 0.1 1 10 IC / A 100
t
Fig.1. Switching times waveforms.
Fig.4. High and low DC current gain. hFE = f (IC) VCE = 1 V
ICsat 90 % IC
100
hFE VCE = 5 V
BU2530/2AL Tj = 85 C Tj = 25 C
10 % tf ts IB IBend
t
10
t
1 0.01 0.1 1 10 IC / A 100
- IBM
Fig.2. Switching times definitions.
Fig.5. High and low DC current gain. hFE = f (IC) VCE = 5 V
+ 150 v nominal adjust for ICsat
VCEsat / V 10 Tj = 85 C Tj = 25 C
BU2530/2AL
Lc
1
IC/IB = 10
IBend
LB
T.U.T. Cfb
IC/IB = 5 0.1
-VBB
0.01 0.1 1 10 IC / A 100
Fig.3. Switching times test circuit.
Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.000
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
VBEsat / V 1 IC = 9 A 0.9
BU2530/2AL
VCC
LC
0.8 IC = 7 A
IBend
Tj = 85 C Tj = 25 C
VCL LB T.U.T.
CFB
0.7
-VBB
0.6
0
1
2
3
IB / A
4
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
PD% Normalised Power Derating
Fig.10. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 5 V; LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 H; CFB = 1 - 10 nF; IB(end) = 1.0 - 2.0 A
120 110 100 90 80 70 60 50 40 30 20 10 0
IC / A 40
BU2530/32AL
30 Area where fails occur 20
10
0
20
40
60
80 100 Tmb / C
120
140
0 100 VCE / V 1000 1500
Fig.8. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
Zth / (K/W) BU2525A
Fig.11. Reverse bias safe operating area. Tj Tjmax
10
1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 D=0 0.001 1E-06
P D tp D= tp T t
T
1E-04
1E-02 t/s
1E+00
Fig.9. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
September 1997
4
Rev 1.000
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.12. SOT429; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.000
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997
6
Rev 1.000

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